Part Number
|
GTT2605 |
Manufacturer
|
GTM |
Description
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 17, 2007 |
Detailed Description
|
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE ...
|
Datasheet
|
GTT2605
|
Overview
www.
DataSheet4U.
com
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -4.
0A
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The GTT2605 is universally used for all commercial-industrial applications.
Description
*Fast Switching Characteristic *Lower Gate Charge *Small Footprint & Low Profile Package
Features
Package Dimensions
REF.
A A1 A2 c D E E1
Millimeter Min.
Max.
1.
10 MAX.
0 0.
10 0.
70 1.
00 0.
12 REF.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80
REF.
L L1 b e e1
Millimeter Min.
Max.
0.
45 REF.
0.
60 REF.
0°...
Similar Datasheet