Part Number
|
GTT2623 |
Manufacturer
|
GTM |
Description
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 17, 2007 |
Detailed Description
|
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE ...
|
Datasheet
|
GTT2623
|
Overview
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DataSheet4U.
com
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 170m -2.
0A
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The GTT2623 is universally used for all commercial-industrial applications.
Description
*Low Gate Charge *Low On-resistance
Features
Package Dimensions
REF.
A A1 A2 c D E E1
Millimeter Min.
Max.
1.
10 MAX.
0 0.
10 0.
70 1.
00 0.
12 REF.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80
REF.
L L1 b e e1
Millimeter Min.
Max.
0.
45 REF.
0.
60 REF.
0° 10° 0.
30 0.
50 0.
95 REF.
1.
90 REF.
Absolute Maximum...
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