Part Number
|
GTT8209E |
Manufacturer
|
GTM |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 17, 2007 |
Detailed Description
|
com
Pb Free Plating Product
ISSUED DATE :2006/08/08 REVISED DATE :
GTT8209E
N-CHANNEL ENHANCEMENT MODE...
|
Datasheet
|
GTT8209E
|
Overview
com
Pb Free Plating Product
ISSUED DATE :2006/08/08 REVISED DATE :
GTT8209E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 21m 7A
The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.
The GTT8209E is universally used for all commercial-industrial applications.
Description
* Lower Gate Charge *Small Package Outline *RoHS Compliant
Features
Package Dimensions
REF.
A A1 A2 c D E E1
Millimeter Min.
Max.
1.
10 MAX.
0 0.
10 0.
70 1.
00 0.
12 REF.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80
REF.
L L1 b e e1
Millimeter Min.
Max.
0.
45 REF.
0.
60 REF.
0° 10° 0.
30 0.
50 0.
95 REF.
1.
90 REF.
Absolute Maxim...
Similar Datasheet