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ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F
G2N7000
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
The G2N7000 is designed for high voltage, high speed applications such as switching
regulators, converters, solenoid and relay drivers.
Package Dimensions
D
E S1
TO-92
A
S E A T IN G PLANE
b1
REF.
L
e1
e
b
C
A S1 b b1 C
Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51
REF.
D E L e1 e
Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66
Absolute Maximum Ratings at Ta = 25
Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage -Continuous -Non-repetitive (tp 50us) Drain Current ...