| Part Number | LNA2603F |
| Manufacturer | Panasonic Semiconductor |
| Title | GaAs Infrared Light Emitting Diode |
| Description | Infrared Light Emitting Diodes LNA2603F GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 ... |
| Features |
High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package
3.9±0.25
4.5±0.15 3.5±0.15
2.1±0.15 1.6±0.15 0.8±0.1
12.8 min.
(2.95)
2-1.2±0.3 2-0.45±0.15
0.45±0.15
...
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| File Size | 42.38KB |
| Datasheet |
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