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DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3113B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance RDS(on) = 4.
4 Ω MAX.
(VGS = 10 V, ID = 1.
0 A) • Low gate charge QG = 7.
9 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 2.
0 A) • Gate voltage rating : ±30 V • Avalanche capability ratings R ORDERING INFORMATION
PART NUMBER 2SK3113B-S15-AY
Note Note Note Note
LEAD PLATING
PACKING Tube 70 p/tube
PACKAGE TO-251 (MP-3-a) typ.
0.
39 g TO-251 (MP-3-b) ty...