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Part Number
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LNA2802L |
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Manufacturer
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Panasonic Semiconductor |
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Description
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GaAs Infrared Light Emitting Diode |
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Published
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Mar 22, 2005 |
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Detailed Description
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Infrared Light Emitting Diodes
LNA2802L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max.
2-0.8 max. 2...
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Datasheet
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LNA2802L
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Overview
Infrared Light Emitting Diodes
LNA2802L
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.
0 max.
2-0.
8 max.
2-0.
5±0.
1 0.
5±0.
1
For optical control systems Features
High-power output, high-efficiency : PO = 5 mW (typ.
) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.
) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package
(1.
5)
ø3.
8±0.
2 ø3.
0±0.
2
1.
0
2.
54
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C...
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