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G B AT 5 4 / A / C / S
Description
Silicon
Schottky Barrier Double Diodes .
1/2
Package Dimensions
REF.
A B C D E F
Min.
2.
70 2.
40 1.
40 0.
35 0 0.
45
Millimeter
Max.
3.
10 2.
80 1.
60 0.
50 0.
10 0.
55
REF.
G H K J L M
Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Style : Pin 1.
Anode 2.
Cathode 3.
Common Connection Symbol Tj Tstg Ratings +125 -65 ~ +125 30 200 300 600 PD 230 V mA mA mA mW Unit
Absolute Maximum Ratings
Parameter Junction Temperature Storage Temperature Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge Forward Current Total Power Dissipation at Ta = 25
Characteristics
characteristics
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