Part Number
|
GC01L60 |
Manufacturer
|
GTM |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 19, 2007 |
Detailed Description
|
com
Pb Free Plating Product
ISSUED DATE :2005/09/14 REVISED DATE :
GC01L60
N-CHANNEL ENHANCEMENT MODE ...
|
Datasheet
|
GC01L60
|
Overview
com
Pb Free Plating Product
ISSUED DATE :2005/09/14 REVISED DATE :
GC01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12 160mA
The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device.
*Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics
Description
Features
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
REF.
L
e1
e
b
C
A S1 b b1 C
Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51
REF.
D E L e1 e
Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66
Absolute Maximum Ratings
Parameter Drain-Sour...
Similar Datasheet