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GC01L60

Part Number GC01L60
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 19, 2007
Detailed Description com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE ...
Datasheet GC01L60




Overview
com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device.
*Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Description Features Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF.
L e1 e b C A S1 b b1 C Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51 REF.
D E L e1 e Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66 Absolute Maximum Ratings Parameter Drain-Sour...






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