com ISSUED DATE :2004/09/20 REVISED DATE : GD501SD Description S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 5 V, C U R R E N T 0 .
1 A Package Dimensions The GD501SD is designed for low power rectification and high reliability.
REF.
A A1 A2 D E HE Millimeter Min.
Max.
0.
85 1.
05 0 0.
10 0.
80 1.
00 1.
15 1.
45 1.
60 1.
80 2.
30 2.
70 REF.
L b c Q1 Millimeter Min.
Max.
0.
20 0.
25 0.
10 0.
40 0.
40 0.
18 0.
15 BSC.
Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.
3mSec single half sine-wave Typical Junction Capacitance between Te...

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