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Part Number
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LNA4801L |
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Manufacturer
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Panasonic Semiconductor |
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Description
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GaAlAs Infrared Light Emitting Diode |
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Published
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Mar 22, 2005 |
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Detailed Description
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Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max. 2-0.8 max....
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Datasheet
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LNA4801L
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Overview
Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.
0 max.
2-0.
8 max.
2-0.
5±0.
1 0.
5±0.
1 (1.
5) 2.
54 1.
7
For optical control systems Features
Fast response and high-speed modulation capability : fC = 20 MHz (typ.
) Wide directivity : θ = 22 deg.
(typ.
) Transparent epoxy resin package
ø3.
8±0.
2 ø3.
0±0.
2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 190 100 1 3 –25 to +85 –30 to +100
Unit mW mA A V ˚C ˚C
1.
0
15.
0±1.
0 4.
5±0.
3
5.
0±0.
2 0.
6
1
2
1: Anode 2: Cathode
f =...
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