Infrared Light Emitting Diodes LNA4905L GaAs Infrared Light Emitting Diode Unit : mm 5.
7±0.
2 2 Max.
Not soldered For optical control equipment s Features • High output power, high-efficiency : (15 mW min.
) • Quick response, high speed modulation (fC=30 MHz typ.
) • Transparent epoxy resin package φ5±0.
2 1 4.
4±0.
3 1 12.
0±1.
0 14.
0±1.
0 5.
7±0.
2 s Absolute Maximum Ratings Ta=25°C Parameter Power dissipation Forward current(DC) Pulse forward current Reverse voltage(DC) Operating ambient temperature Storage temperature * 2-1±0.
15 2-0.
6±0.
15 0.
6±0.
15 Symbol PD IF IFP VR Topr Tstg Ratings 190 100 1 3 −25 to +85 −30 to +100 Unit mW mA A V °C °C 1 2.
54* 2 Note 1.
* : Indicates root dimension...

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