| Part Number | GE13003 |
| Manufacturer | GTM |
| Title | NPN SILICON POWER TRANSISTOR |
| Description | NPN SILICON POWER TRANSISTOR The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical.... |
| Features |
Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 700V Blocking Capability SOA and Switching Application Information
tc @ 1A, 100
is 290ns(Typ)
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 ...
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| File Size | 493.42KB |
| Datasheet |
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GE13005 : The GE13005 is designed for electronic transformers and power switching circuit applications. Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation at Tc=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 700 400 9 4 75 V V V A W Unit Electrical Characteristics(Tc = 25 Parameter.
GE13007 : The GE13007 is designed for electronic transformers and power switching circuit applications. Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation at Tc=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 700 400 9 8 80 V V V A W Unit Electrical Characteristics(Tc = 25 Parameter.