com Pb Free Plating Product ISSUED DATE :2006/06/06 REVISED DATE : GE75N07 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 75V 11m 80A The GE75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristics *RoHS Compliant Description Features Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60...

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