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G S B 11 3 2
The GSB1132 is a epitaxial
1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R
Description
planar type
PNP silicon
transistor .
(IC/IB = -500mA / -50 mA)
Features
Low VCE(sat).
VCE(sat) = -0.
2V(Typ.
)
Package Dimensions
REF.
A B C D E F
Millimeter Min.
Max.
4.
4 4.
6 4.
05 1.
50 1.
30 2.
40 0.
89 4.
25 1.
70 1.
50 2.
60 1.
20
REF.
G H I J K L M
Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 1.
40 0.
35 5 0.
52 1.
60 0.
41 TYP.
0.
70 REF.
Unit
Absolute Maximum Ratings (Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(PULSE) Collector Power D...