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ISSUED DATE :2005/06/08 REVISED DATE :
GSBC807
Description Package Dimensions
PNP EPITAXIAL PLANAR
TRANSISTOR
The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
REF.
A A1 A2 D E HE
Millimeter Min.
Max.
0.
80 1.
10 0 0.
10 0.
80 1.
00 1.
80 2.
20 1.
15 1.
35 1.
80 2.
40
REF.
L1 L b c e Q1
Millimeter Min.
Max.
0.
42 REF.
0.
15 0.
35 0.
25 0.
40 0.
10 0.
25 0.
65 REF.
0.
15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEB...