com Ordering number : ENN8154 3LP03M P-Channel Silicon MOSFET 3LP03M Features • • • • General-Purpose Switching Device Applications Low ON-resistance.
High-speed switching.
2.
5V drive.
High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source].
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 -10 --0.
25 --1 0.
15 150 --55 to +150 Unit V V A A W °C °C (*1) : Note, when designing a circui...

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