CPH5805

CPH5801 : Ordering number:EN6427 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. · Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively. Package Dimensions unit:mm 2171 [CPH5801] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C P.

CPH5803 : Ordering number : ENN6935 CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3405) and a Schottky Barrier Diode (SBS004M) 2171 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. 2.9 54 • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. 1 • Low forward voltage. 0.95 0.2 [CPH5803] 0.15 3 0.05 0.6 1.6 0.6 2.8 2 0.4 0.7 0.2 0.9 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.4 SANYO : CPH5 Specifications Absolute Maximum Ratings at Ta=25°C Param.

CPH5804 : Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. 2.9 54 • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. 1 0.95 0.6 1.6 0.6 2.8 [CPH5804] 3 2 0.4 0.15 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.2 0.7 0.2 0.9 0.4 SANYO : CPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [M.

CPH5809 : www.DataSheet4U.com Ordering number : ENN7267 CPH5809 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5809 DC / DC Converter Applications Preliminary Features • Package Dimensions • The CPH5809 composite device consists of followunit : mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ONresistance, ultrahigh-speed switching, and low driving voltage. The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. Each device incorporated in the CPH5809 is equivalent to the MCH3411 and to the SBS005, respectively. [CPH5809] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.0.