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Ordering number : ENN7786
CPH5826
CPH5826
Features
• •
MOSFET : N-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
General-Purpose Switching Device Applications
•
•
DC / DC converter applications.
Composite type with a N-channel sillicon MOSFET (MCH3406) and a
schottky barrier diode (SB07-03C) contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• 1.
8V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
• Low reverse current.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse...