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Ordering number : EN8688
CPH5846
SANYO Semiconductors
DATA SHEET
CPH5846
Features
•
MOSFET : P-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
General-Purpose Switching Device Applications
Composite type with a P-Channel Sillicon MOSFET (MCH3309) and a
Schottky Barrier Diode (SS10015M) contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• Low voltage drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissi...