www.
DataSheet4U.
com
Ordering number : ENA0336
CPH5852
SANYO Semiconductors
DATA SHEET
CPH5852
Features
•
MOSFET : P-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
General-Purpose Switching Device Applications
•
•
Composite type containing a P-Channel MOSFET (MCH3312) and a
Schottky Barrier Diode (SB1003M3), facilitating high-density mounting.
[MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive [SBD] • Short reverse recovery time • Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Te...