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SEMICONDUCTOR
TECHNICAL DATA
KHB9D5N20P1/F1/F2
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
A
KHB9D5N20P1
O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES
VDSS=200V, ID=9.
5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.
)=18.
5nC @VGS = 10V
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27...