Part Number
|
DBG250G |
Manufacturer
|
Sanyo Semicon Device |
Description
|
Diffused Junction Silicon Diode |
Published
|
Oct 4, 2007 |
Detailed Description
|
com
Ordering number : ENA0701
DBG250G
SANYO Semiconductors
DATA SHEET
DBG250G
Features
• • • •
Dif...
|
Datasheet
|
DBG250G
|
Overview
com
Ordering number : ENA0701
DBG250G
SANYO Semiconductors
DATA SHEET
DBG250G
Features
• • • •
Diffused Junction Silicon Diode
25A Single-Phase Bridge Rectifier
Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : VRM=600V.
Average output current : IO=25A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value Tc=113°C, with heatsink Ta=25°C, without heatsink 50Hz sine 1cycle peak value C...
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