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DBG250G

Part Number DBG250G
Manufacturer Sanyo Semicon Device
Description Diffused Junction Silicon Diode
Published Oct 4, 2007
Detailed Description com Ordering number : ENA0701 DBG250G SANYO Semiconductors DATA SHEET DBG250G Features • • • • Dif...
Datasheet DBG250G




Overview
com Ordering number : ENA0701 DBG250G SANYO Semiconductors DATA SHEET DBG250G Features • • • • Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : VRM=600V.
Average output current : IO=25A.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value Tc=113°C, with heatsink Ta=25°C, without heatsink 50Hz sine 1cycle peak value C...






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