Light Emitting Diodes LNJ808R88RA Ultra High Bright Surface Mounting Chip LED InGaAlP SS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Power dissipation PD Forward current IF Pulse forward current * IFP Reverse voltage VR Operating ambient temperature Topr Storage temperature Tstg Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
50 20 60 4 –25 to +85 –30 to +100 Unit mW mA mA V °C °C  Electro-Optical Characteristics Ta = 25°C Parameter Symbol Conditions Luminous intensity Forward current Forward voltage Peak emission wavelength Spectral half band width Reverse current IO IF VF IF = 10 mA λP IF = 10 mA Δλ IF = 10 mA IR VR = 4 V  L...

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