Part Number
|
MG600Q1US61 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
IGBT Module Silicon N Channel IGBT |
Published
|
Oct 4, 2007 |
Detailed Description
|
www.DataSheet4U.com
MG600Q1US61
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
High Power Switching Applicatio...
|
Datasheet
|
MG600Q1US61
|
Overview
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DataSheet4U.
com
MG600Q1US61
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
High Power Switching Applications Motor Control Applications
· · · · · High input impedance High speed: tf = 0.
3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.
6 V (max) The electrodes are isolated from case.
Enhancement-mode Unit: mm
Equivalent Circuit
C
G E E
JEDEC JEITA TOSHIBA Weight: 465 g (typ.
)
― ― 2-109F1A
Maximum Ratings (Tc = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80°C) DC (Tc = 80°C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting ¾ ¾ Rating 1200 ±20 600 600 5400 150 -40 to 125 2500 (AC 1 min...
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