Power
Transistors com
2SB1070, 2SB1070A
Silicon
PNP epitaxial planar type
For low-voltage switching
8.
5±0.
2
Unit: mm
3.
4±0.
3 1.
0±0.
1 6.
0±0.
2 10.
0±0.
3 1.
5±0.
1
■ Features
• Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment
4.
4±0.
5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1070 2SB1070A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 1.
3 150 −55 to +150 °C °C V A A W V Unit V
Collector-emitter voltage ...