Part Number
|
GTS9922E |
Manufacturer
|
GTM |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Oct 5, 2007 |
Detailed Description
|
com
Pb Free Plating Product
ISSUED DATE :2005/10/26 REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHAN...
|
Datasheet
|
GTS9922E
|
Overview
com
Pb Free Plating Product
ISSUED DATE :2005/10/26 REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 15m 6.
8A
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low on-resistance *Capable of 2.
5V gate drive *Optimal DC/DC battery application *Surface mount package
Description
Features
Package Dimensions
REF.
A A1 b c D
Millimeter Min.
0.
05 0.
19 0.
09 2.
90
Max.
1.
20 0.
15 0.
30 0.
20 3.
10
REF.
E E1 e L S
Millimeter Min.
6.
20 4.
30 0.
45 0°
Max.
6.
60 4.
50 0.
75 8°
0.
65 BSC
Absolute Maximum Ratings
Parameter Drain-Source ...
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