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PD -95190
IRG4PH50UDPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, 200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free
C
UltraFast CoPack IGBT
VCES = 1200V
G E
VCE(on) typ.
= 2.
78V
@VGE = 15V, IC = 24A
n-cha nn el
Benefits
• Higher switching frequency capability than competitive IGBTs • Highest efficien...