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RQG1004UPAQL
NPN Silicon Germanium
Transistor High Frequency Low Noise Amplifier
REJ03G1552-0100 Rev.
1.
00 Jul 20, 2007
Features
• Ideal for LNA applications.
e.
g.
Tuner, Wireless LAN, Cordless phone and etc.
• High gain and low noise.
MSG = 25 dB typ.
, NF = 0.
65 dB typ.
at VCE = 2 V, IC = 5 mA, f = 0.
9 GHz MSG = 22 dB typ.
, NF = 0.
75 dB typ.
at VCE = 2 V, IC = 5 mA, f = 1.
8 GHz MSG = 21 dB typ.
, NF = 0.
85 dB typ.
at VCE = 2 V, IC = 5 mA, f = 2.
4 GHz MSG = 15 dB typ.
, NF = 1.
3 dB typ.
at VCE = 2 V, IC = 10 mA, f = 5.
8 GHz • High transition frequency fT = 41 GHz typ.
• Small and low height package MFPAK-4 (1.
4 x 0.
8 x 0.
55(max) mm)
Outline
RENESAS package code: PUSF0...