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PROCESS
Small Signal
Transistor
NPN - Saturated Switch
Transistor Chip
CP207
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 93,430 PRINCIPAL DEVICE TYPES 2N2369A CMPT2369 EPITAXIAL PLANAR 9.
0 x 14 MILS 8.
0 MILS 3.
1 x 2.
9 MILS 3.
1 x 2.
9 MILS Al - 13,000Å Au - 6,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.
centralsemi.
com
R2 (1-August 2002)
com
Central
TM
PROCESS
CP207
Semiconductor Corp.
Typical Electrical Characteristics...