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PROCESS
Power
Transistor
CP208
Central
TM
NPN - Amp/Switch
Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,630 PRINCIPAL DEVICE TYPES CJD31C MJE182 TIP31C EPITAXIAL BASE 66 X 66 MILS 12.
5 ± 1.
0 MILS 12 X 24 MILS 11 X 14 MILS Al - 50,000Å Cr/Ni/Ag - 16,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.
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R2 (1-August 2002)
www.
DataSheet4U.
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Central
TM
PROCESS
CP208
Semiconductor Corp.
Typical Electrical Characteristics
...