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2STA1695
High power
PNP epitaxial planar bipolar
transistor
General features
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Preliminary data
High breakdown voltage VCEO = -140V Complementary to 2STC4468 Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier TO-3P
Description
The device is a
PNP transistor manufactured using new BiT-LA (Bipolar
transistor for linear amplifier) technology.
The resulting
transistor shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STA1695 Marking 2STA1695 Package TO-3P Packaging Tube
June 2007
Rev 1
1/9
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