www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA KMB7D1DP30QA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for portable equipment and SMPS.
D P G H T L FEATURES VDSS=-30V, ID=-7.
1A Drain-Source ON Resistance RDS(ON)=25m (Max.
) @ VGS=-10V RDS(ON)=41m (Max.
) @ VGS=-4.
5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T MILLIMETERS _ 0.
2 4.
85 + _ 0.
2 3.
94 + _ 0.
3 6.
02 + _ 0.
1 0.
4 + 0.
15+0.
1/-0.
05 _ 0.
2 1.
63 + _ 0.
2 0.
65 + 1.
27 0.
20+0.
1/-0.
05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage...

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