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com M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.
8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.
7 V to 2.
0 V for program, erase and read – VDDQ = 2.
7 V to 3.
6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Access: 85 ns Synchronous Burst Read Suspend Programming time – 2.
5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8-Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while...

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