Part Number
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M58PR512LE |
Manufacturer
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ST Microelectronics |
Description
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(M58PR001LE - M58PR512LE) Flash NOR / Mobile Terminal |
Published
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Oct 31, 2007 |
Detailed Description
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com
M58PR256LE M58PR512LE M58PR001LE
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, bur...
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Datasheet
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M58PR512LE
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Overview
com
M58PR256LE M58PR512LE M58PR001LE
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.
8 V supply Flash memories
Features
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Supply voltage – VDD = 1.
7 V to 2.
0 V for program, erase and read – VDDQ = 1.
7 V to 2.
0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 96 ns Programming time – 4.
2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple bank memory array: 32 Mbit banks (256 Mb devices) 64 Mbit banks (512 Mb devices) 128 Mbit banks (1 Gb devices) – Four EFA (extended flash arra...
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