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DFB4N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 2.
5 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability 100% Avalanche Tested 1.
Gate {
◀
2.
Drain
BVDSS = 600V
●
▲
● ●
RDS(ON) = 2.
5 ohm ID = 4A
3.
Source
{
General Description
This N-channel enhancement mode field-effect power
transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
TO-263 (D2-Pak)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Vo...