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DFF7N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 1.
0 )@VGS=10V 1.
Gate {
{ {
N-Channel MOSFET
2.
Drain
BVDSS = 600V RDS(ON) = 1.
0 ohm ID = 7.
4A
3.
Source
Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power
transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220F( Isolated ) pkg is well suited for adaptor power unit and small power inverter application.
TO-220F
1 2
3
Absolute Maximum Ratings...