com
DFF4N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 2.
5 )@VGS=10V 1.
Gate {
{ {
N-Channel MOSFET
2.
Drain
BVDSS = 600V RDS(ON) = 2.
5 ohm ID = 4A
3.
Source
Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power
transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220F( Isolated ) pkg is well suited for adaptor power unit and power inverter application.
TO-220F
1 2
3
Absolute Maximum Ratings
Symbol
...