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DFU2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.
5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1.
Gate {
{ {
2.
Drain
BVDSS = 600V RDS(ON) = 5.
5ohm ID = 2.
1A
3.
Source
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The I-PAK pkg is well suited for charger SMPS and small power inverter application.
I-PAK
1 2 3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TST...