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DFK1N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 11.
5 )@VGS=10V 1.
Gate {
{ {
N-Channel MOSFET
2.
Drain
BVDSS = 600V RDS(ON) = 11.
5 ohm ID = 0.
8A
3.
Source
Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The SOT-223 pkg is well suited for charger SMPS and small power inverter application.
SOT-223
2
1
2
3
Absolute Maximum Ratings
Symbol
VDSS ID ...