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DFP840
N-Channel MOSFET
Features
RDS(on) (Max 0.
85 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.
Drain
BVDSS = 500V
1.
Gate
RDS(ON) = 0.
85 ohm ID = 8A
3.
Source
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS...