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DFP85N06
N-Channel MOSFET
Features
Low RDS(on) (0.
010 )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range
2.
Drain
BVDSS = 60V
1.
Gate 3.
Source
RDS(ON) = 0.
010 ohm ID = 85A
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ...