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DFP50N06
N-Channel MOSFET
Features
RDS(on) (Max 0.
022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.
Drain
BVDSS = 60V
1.
Gate 3.
Source
RDS(ON) = 0.
022 ohm ID = 50A
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to...