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2SC4138
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4138 500 400 10 10(Pulse20) 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose External Dimensions MT-100(TO3P)
5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4.
8±0.
2 2.
0±0.
1
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.
2A IC=6A, IB=1.
2A VCE=12V, IE=–0.
7A VCB=10V, f=1MHz 100max 100max 400min
(Ta=25°C) 2SC4138 Unit
µA µA
19.
9±0.
3
4.
0
V V MHz pF
10 to...