com
Si4726CY
Vishay Siliconix
N-Channel Synchronous MOSFETs with Break-Before-Make
FEATURES
D D D D 4.
5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times (30 ns typ.
) D D D D 20-V MOSFETs High Side: 0.
0135 W @ VDD = 4.
5 V Low Side: 0.
0065 W @ VDD = 4.
5 V Switching Frequency: 250 kHz to 1 MHz
DESCRIPTION
The Si4726CY n-channel synchronous MOSFET with break-before-make (BBM) is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies.
It’s purpose is to simplify the use of n-channel MOSFETs in high frequency buck
regulators.
This device is design to be used with any single output PWM IC or ASIC to produce a hi...