2SK117
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• • • • High |Yfs|: |Yfs| = 15 mS (typ.
) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.
0dB (typ.
) (VDS = 10 V, ID = 0.
5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −50 10 300 125 −55~125 Unit V mA mW °C °C
Note:
Using continuously under heavy loads (e.
g.
the application of JEDEC TO-92 high temperature/current/vo...