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2SD1710
GENERAL DESCRIPTION
Silicon Diffused Power
Transistor
Highvoltage,high-speed switching
npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PML
CONDITIONS VBE = 0V TYP
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC = 4.
0A; IB = 1.
0A f = 16KHz IF = 4.
5A ICsat = 4.
5A; f = 16KHz
1.
6 0.
5
MAX 1500 600 5...