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BIPOLARICS, INC
Part Number BMT1417B26
SILICON MICROWAVE POWER
TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• Common Base, Class C Package Configuration • High Output Power
26 W @ 1.
4 to 1.
7 GHz • High Gain Bandwidth Product f = 6.
0 GHz @ IC = 4.
16 A t • High Gain GPE = 7.
0 dB to 8.
2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Packaging • Built-In Matching Network
Absolute Maximum Ratings:
SYMBOL PARAMETERS RATING UNITS
VCBO VCEO VEBO IC T
J
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance
50 28 3.
5 4.
16...