Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
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01% Probability on CCDF.
Power Gain — 17.
5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.
1 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.
84 MHz Chan...