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J512

Part Number J512
Manufacturer Toshiba Semiconductor
Description Silicon P Channel MOS Type Field Effect Transistor
Published Jan 23, 2008
Detailed Description 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 Chopper Regulator, DC−DC Converter...
Datasheet J512





Overview
2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.
0 Ω (typ.
) l High forward transfer admittance : |Yfs| = 3.
7 S (typ.
) l Low leakage current : IDSS = −100 µA (max) (VDS = −250 V) l Enhancement−mode : Vth = −1.
5~−3.
5 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3...






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